METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to prevent a bridge between capacitor nodes and a defect, by preventing scum on a photoresist layer from being generated by a step difference of a cell region. CONSTITUTION: A scribe-in line and a cell region are defined in a semiconductor substrate(20) on which an insulating layer(21) is formed. The first polysilicon layer(22) and a core oxidation layer(23) are sequentially formed on the semiconductor substrate. The core oxidation layer and first polysilicon layer are patterned to form a capacitor node(300). The second polysilicon layer(25) is formed on the insulating layer and capacitor node. The first and second photoresist layers having different structures and generating acid are sequentially formed on the second polysilicon layer. The second and first photoresist layers are sequentially patterned to form a photoresist pattern masking the scribe-in line.