| 摘要 |
PURPOSE: An electrostatic discharge prevention structure of a semiconductor device is to prevent an electrostatic fail from generating at a drain contact part adjacent to a pad. CONSTITUTION: An active region(201) is formed on a semiconductor substrate. At least one gate electrode line(203) is arranged in the same interval on the active region to cross the active region. A source and drain region(S,D) are formed at the active region on the both sides of the gate electrode line. A pad(207) is arranged on one side of the active region. A metal interconnection(209) connects the pad and the drain region, and includes the drain region and a plurality of contact parts(CT1-CTn). The plurality of contact parts is formed so that contact resistance within the contact parts are gradually reduced when they become more distant from the pad. The plurality of contact parts are formed so that their sizes are increased when they become more distant from the pad.
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