| 摘要 |
PURPOSE: A method is provided to reduce etching time and to prevent a data line from being damaged by an ITO etchant. CONSTITUTION: A method comprises the steps of forming, onto an insulation substrate(1), a plurality of gate lines(2) and data lines vertically crossing with each other, and a thin film transistor(10) which is disposed at a crossing portion between the gate line and the data line and includes a gate electrode, a semiconductor layer(4) and source/drain electrodes(6a,6b); depositing a protective film(11) onto the resultant structure, and forming a contact hole(12) for exposing the source electrode of the thin film transistor by selectively etching a predetermined portion of the protective film; depositing an ITO metal film onto the protective film; and forming a pixel electrode(13) which contacts the source electrode of the thin film transistor, by etching the ITO metal film. The ITO metal film is deposited at an ambient temperature so as to have an amorphous crystal structure.
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