| 摘要 |
PURPOSE: An SOI(Silicon On Insulator) device having a double gate structure and a method for fabricating the same are to prevent an occurrence of a floating body effect, thereby stabilizing an operational characteristic. CONSTITUTION: An SOI device comprises: a semiconductor layer formed on relatively a thin portion of and relatively a thick portion of a buried oxide layer(15); an upper gate(18) disposed on a central portion of the semiconductor layer; a source and a drain regions(19,20) formed in the semiconductor layer at both sides of the upper gate; an interlayer dielectric(21) formed on the buried oxide layer including the upper gate and the source and the drain regions; and an electrode independently in contact with a lower gate(16), and the source and the drain regions and disposed on the interlayer dielectric. A method for fabricating an SOI device comprises the steps of: forming a buried oxide layer(15) having partially different thickness in a silicon substrate by implanting oxygen ions twice; forming a high impurity-doped region(16) at a boundary between the buried oxide layer and the base layer; and patterning the semiconductor layer such that the semiconductor layer remains only on the thin portion and the thick portion of the buried oxide layer.
|
