| 摘要 |
PURPOSE: A method for forming a metal pattern of a semiconductor device by using a low photoresist selectivity is provided to precisely form metal patterns by restraining the metal bridges from creating between the metal patterns. CONSTITUTION: A metal layer is deposited on a semiconductor substrate(20). A photoresist is coated on the metal layer. Then, the photoresist is patterned so as to form a photoresist pattern(30a). The metal layer is etched by using a reaction gas consisting of Cl2, BCl3 and Ar thereby forming a metal pattern(25a). When the etching process is carried out, the photoresist pattern(30a) is used as an etching mask. The etching process includes a plasma etching process. The reaction gas includes Cl2 of 50-90sccm, BCl3 of 50-90sccm, and Ar of 40-80sccm.
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