METHOD FOR MAKING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for making a capacitor of a semiconductor device is provided to ensure a high capacitance and a low leakage current characteristic by forming a double structure of Al2O3 layer and TiO2 layer as a dielectric layer. CONSTITUTION: In a method for making a capacitor of a semiconductor device, a lower electrode is formed on a semiconductor substrate on which a lower structure is formed by a predetermined process. As a dielectric layer, a double layer of Al2O3 layer(13) and TiO2(14) layer is formed on the lower electrode. An upper electrode is formed on the dielectric layer. The Al2O3 layer(13) is deposited on a wafer heated as a temperature of 200-450 deg.C, after inputting (CH3)3Al source gad and H2O gas in a reaction chamber maintaining a pressure 0.1 to 1 Torr.