METHOD FOR MANUFACTURING A POLYSILICON LAYER OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a polysilicon layer of a semiconductor device is to provide a uniform boron density over and under the polysilicon layer, by doping boron ions while forming an amorphous silicon layer, so that boron ions doped by an in-situ method and ion-injected boron ions are combined under the polysilicon layer. CONSTITUTION: A gate insulating layer(3) is evaporated on a semiconductor substrate(1). An impurity doped amorphous silicon layer is formed on the gate insulating layer by an in-situ method. Impurity ions are injected into the amorphous silicon layer. All of the semiconductor substrate are thermally processed so that the impurities doped by an in-situ method and ion-injected impurities are combined under a polysilicon layer(4a).