发明名称 METHOD FOR FABRICATING FIELD EMISSION DISPLAY DEVICE
摘要 PURPOSE: A method for fabricating a field emission display device is provided to achieve the uniform electron discharge property, and to drop a driving voltage by minimizing a distance between an emitter and a gate. CONSTITUTION: A method for fabricating a field emission display device comprises the steps of: stacking a cathode(12) and a structure film(32A) on a certain substrate; shaping a structure(32B) by etching the structure film in an inclined shape by using a hard mask pattern(36); forming an emitter film(34,34A) by using a sputtering process; removing the hard mask pattern by using a wet etching process; applying an insulating film(16,16A) and a gate film(18,18A) successively by using a deposition process; removing the insulating film and the gate film located on the structure. Since the hard mask pattern is removed first, and then the insulating film and the gate film is deposited, it is possible to minimize a distance between the emitter film and the gate film, and to keep the distance uniformly, thereby decreasing a driving voltage and improving the electron discharge property.
申请公布号 KR20010002344(A) 申请公布日期 2001.01.15
申请号 KR19990022096 申请日期 1999.06.14
申请人 LG ELECTRONICS INC. 发明人 KIM, TAE YEONG;LEE, DONG GU
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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