| 摘要 |
PURPOSE: A method for fabricating a semiconductor laser diode is provided which manufactures the laser diode and a photo-diode capable of monitoring the laser diode, integrating them in one device, to allow monitored optical power not to affect an output signal and to realize monitor sensitivity stable for temperature variation. CONSTITUTION: In a method for fabricating a semiconductor laser diode, a grating(202) is formed on an InP substrate(201) and then a first InP layer(203) is formed to completely bury and flatten the grating. A waveguide(204), and active layer(205) and a buffer layer(206) are sequentially formed on the first InP layer. A predetermined portion of the buffer layer, active layer, waveguide, InP layer and InP substrate is etched, and then a second InP layer(207) is grown at this etched portion. A current blocking layer(208) is grown on the second InP layer formed at the etched portion. A third InP layer(209) is grown on the overall surface of the substrate, and then an impurity is implanted into a predetermined region of the third InP layer to form a first doping layer(210). A light absorbing layer(211) is formed on the overall surface of the substrate and an impurity is implanted into a predetermined region of the light absorbing layer to form a second doping layer(212). An Au pad(213) is formed on the InP substrate and light absorbing layer and patterned to form a laser diode and photo-diode.
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