| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to remove a facet effect produced in a selective epitaxial growth layer by allowing the selective epitaxial growth layer to have a height higher than that of a gate electrode. CONSTITUTION: A gate oxide film(22) is formed on a semiconductor substrate, and a conductive layer(23) and the first insulation film(24) are sequentially formed on a whole surface of the substrate. An area on where a gate electrode is formed is defined by a photo-lithography process and an etching process. The conductive layer is made of one selected from doped polysilicon, amorphous silicon, and multi-layered structure consisting of metal and silicide. After forming a thermal oxide film(25) on an upper surface of the gate oxide film and a side wall of the conductive layer, an LDD(Lightly Doped Drain) area(26) is formed on the substrate using a low concentration ion implant process. The second insulation film is formed on the substrate, and a spacer(27) is formed on the side wall of the gate electrode.
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