| 摘要 |
PURPOSE: A method for forming a trench isolation is to prevent a dent from being generated at an upper edge portion of the trench isolation, thereby precluding degradation of a gate oxide and deterioration of refresh properties of a device. CONSTITUTION: The method comprise the steps of: sequentially forming the first insulating layer(212), a conductive layer(214), the second insulating layer, the third insulating layer and the fourth insulating layer on a semiconductor substrate(210); patterning the fourth insulating layer, the third insulating layer, the second insulating layer and the conductive layer using a photolithography process to form a trench etch mask; forming a trench on the substrate using the trench etch mask; forming a liner(224) on a whole surface including the trench; forming the fifth insulating layer(226) on the whole surface of the substrate; planarizing the fifth insulating layer and the liner so that the fourth insulating layer is exposed; and sequentially removing the fourth insulating layer, the third insulating layer and the second insulating layer.
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