| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve the reliability and yield rate of the semiconductor device by improving the photosensitivity of the image sensor. CONSTITUTION: A plurality of devices including a photosensing device(3) is formed on a semiconductor substrate(1). Then, at least one first beam transmitting insulating layer, at least one metal wire(5a) and a device protecting film(10) are formed on the semiconductor substrate(1). The device protecting film(10) and the first insulating film are selectively etched so as to form a recess on the upper portion of the photo sensing device(3). The second beam transmitting insulating layer is buried in the recess. The second insulating film is made of the material identical to the material of the first insulating film.
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