METHOD FOR FORMING DAMASCENE STRUCTURE FORMING METAL WIRING OF SEMICONDUCTOR DEVICE USING CHEMICAL SWELLING PROCESS

摘要

PURPOSE: A method for forming a damascene structure forming a metal wiring of a semiconductor device using a chemical swelling process is provided to form simultaneously a metal contact and a metal wiring by using a chemical swelling process. CONSTITUTION: An insulating layer is formed on a semiconductor substrate. A photoresist containing H+ and a photoresist without H+ are applied sequentially on the insulating layer. A mask process is performed by using a metal contact hole and a reticle for forming a metal line pattern. A photoresist pattern is formed by exposing and developing selectively the photoresist layers. An SC-1 is coated on the insulating layer formed with the photoresist layers. The SC-1 is combined with the photoresist layer containing H+ CSP by performing a chemical swelling process. A pattern is formed by the combination process. A metal contact hole is formed by performing a dry etching process. The remaining photoresist is removed. A metal is deposited on the whole surface of the substrate to bury the metal contact hole. A metal wiring is formed by performing a chemical mechanical polishing process.