METHOD FOR MANUFACTURING A WORD LINE OF A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a word line of a semiconductor memory device is provided to prevent defects on the surface of a capping doped silicon layer in consecutive depositions, by minimizing reactivity between a tungsten silicide layer and the capping doped silicon layer under the tungsten silicide layer. CONSTITUTION: After an isolation process is performed on a silicon substrate(10), a gate oxide layer(20) is formed. A doped silicon oxide layer(30) is formed on the gate oxide layer. After a tungsten silicide layer(40) is formed on the doped silicon oxide layer, a capping silicon layer is consecutively formed using monosilnae in the same chamber. A capping doped silicon layer(60) is formed on the capping silicon layer. A mask oxide layer(70) and an anti-reflection coating(ARC) layer are formed on the capping doped silicon layer. A word line is patterned by mask etching.