METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to completely eliminate a polymer, by increasing a time interval for stripping a photoresist layer, and by transforming a chemical material in a post cleaning process. CONSTITUTION: A word line, a bit line and a storage electrode(23) are formed on a semiconductor substrate(11). A tantalum oxide layer(25) as a dielectric layer is formed on the storage electrode. A conductive material for a plate electrode is formed on the resultant surface. A photoresist pattern(29) for the plate electrode is formed on the conductive material for the plate electrode. The conductive material is etched to form the plate electrode(27) by using the photoresist pattern as a mask. A photoresist pattern is stripped. The semiconductor substrate is post-cleaned to eliminate a residue of the photoresist pattern.