发明名称 |
METHOD FOR MANUFACTURING A CAPACITOR CAPABLE OF REDUCING A LEAKAGE CURRENT |
摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to reduce a leakage current without loss of capacitance, by a complex oxide dielectric and a lower electrode in a process while securing a sufficient capacitance. CONSTITUTION: A polysilicon layer is formed on a substrate(1). A Ti layer and an Al layer are sequentially formed on the entire structure. A Ti silicide lower electrode composed of a part of the Ti layer is formed on the polysilicon layer by performing a thermal process in an oxygen atmosphere while the Ti layer not forming the Ti silicide layer and the Al layer are transformed into a complex dielectric layer including Ti, Al and O elements. An upper electrode is formed on the complex dielectric layer.
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申请公布号 |
KR20010004297(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990024920 |
申请日期 |
1999.06.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JEONG TAE;LEE, SANG HYEOP |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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