发明名称 METHOD FOR MANUFACTURING A CAPACITOR CAPABLE OF REDUCING A LEAKAGE CURRENT
摘要 PURPOSE: A method for manufacturing a capacitor is provided to reduce a leakage current without loss of capacitance, by a complex oxide dielectric and a lower electrode in a process while securing a sufficient capacitance. CONSTITUTION: A polysilicon layer is formed on a substrate(1). A Ti layer and an Al layer are sequentially formed on the entire structure. A Ti silicide lower electrode composed of a part of the Ti layer is formed on the polysilicon layer by performing a thermal process in an oxygen atmosphere while the Ti layer not forming the Ti silicide layer and the Al layer are transformed into a complex dielectric layer including Ti, Al and O elements. An upper electrode is formed on the complex dielectric layer.
申请公布号 KR20010004297(A) 申请公布日期 2001.01.15
申请号 KR19990024920 申请日期 1999.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JEONG TAE;LEE, SANG HYEOP
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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