| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the feature of a thin film transistor by preventing hydrogen atoms from diffusing outwards. CONSTITUTION: The first polysilicon layer(202) is formed on an upper portion of an underlayer(201). Then, the first polysilicon layer(202) is patterned so as to form a gate electrode. After forming a gate oxide film(203) on the structure, the second polysilicon film(204) is formed on the gate oxide film(203). Then, an impurity ion implantation process is carried out for forming a channel area in the second polysilicon film(204). After forming an insulating film(205) on the structure, a BPSG film(206) is flattened so as to form the first interlayer insulating film. Then, a barrier metal layer(207), the first metal wire(208) and an anti-reflection film(209) are sequentially formed. After that, the second interlayer insulating film is formed.
|
