| 摘要 |
PURPOSE: A method of forming a dual damascene process is to introduce a plug instead of an interlayer anti-etching layer requiring a high selectivity, thereby increasing an electric permitiivity and a packing ability. CONSTITUTION: A method of forming a dual damascene process comprises the steps of: forming an insulation film(21) which is an oxide film on an under construction(20); forming a via contact mask pattern on an upper portion of the insulation film; forming a via contact by etching the insulation film using the mask pattern so as to expose the construction; removing the mask pattern; forming a metal plug by embedding a metal, such as Cu, within the via contact; forming a pattern of a metal line on a predetermined portion of the insulation film; forming a dual damascene structure by trench-etching the insulation film along the pattern of a metal line; and forming a metal wiring(25) by etching the metal such as Cu.
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