METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent the particles by forming an interlayer insulating film having a thickness below 1000 angstrom. CONSTITUTION: A gate electrode having a capping insulating film(45) and a side wall spacer is formed on a semiconductor substrate(40). An interlayer insulating film(47) is formed on an upper portion of the structure. Then, the interlayer insulating film(47) is selectively removed. After that, a conductive film for forming a landing plug contact is formed on the upper portion of the structure. The conductive film and the interlayer insulating film(47) are polished such that the capping insulating film(45) is exposed, thereby forming the landing plug contact. After forming a high density plasma oxide film(49), the plasma oxide film(49) is selectively etched so as to expose the landing plug contact. Then, a bit line electrically connected to the landing plug contact is formed.