APPARATUS FOR MEASURING ION DOSE

摘要

PURPOSE: An apparatus for measuring an ion dose is provided to rapidly correct an error of changing argon laser power value applied to a real wafer by monitoring the power value in a wafer level since the argon laser power is measured in the wafer level, thereby resolving the difference of the ion dose between wafers. CONSTITUTION: An apparatus for measuring an ion dose of a wafer(WF) laid on a stage(6) by using an argon laser beam for activating ions injected in the wafer and a helium neon laser beam for detecting the ions, includes a monitoring window(62) having a photoelectric conversion element such as a phototransistor, a photo diode, and a photoconductive cell(cds) and mounted on the stage in the vicinity of a reference block(64) for the focusing of an object lens(12) in addition to the wafer, wherein either laser beam is radiated on the monitoring window and the power of the radiated laser beam is measured by an electric signal.