| 摘要 |
PURPOSE: A method for forming a resistor of a semiconductor device is provided to improve the reliability and yield rate of the semiconductor device by permitting resist patterns to have proper resistance value. CONSTITUTION: A multicrystalline silicon layer is formed on an interlayer insulating film of a semiconductor substrate. The first load implant process is carried to the surface of the multicrystalline silicon layer. A photosensitive film pattern is formed for protecting portions to which a high load resister, a conductor and a medium load resistor are formed. Then, the high load resister, the conductor and the medium load resistor are formed by patterning the multicrystalline silicon layer. Then, the photosensitive film pattern is removed. After that, a load mask(30) is formed for carrying out the second load implant process. After that, the load mask(30) is removed.
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