| 摘要 |
PURPOSE: A shallow trench manufacturing method is to prevent from degrading of an isolation characteristic and from generating of a leakage current. CONSTITUTION: A manufacturing method comprises the steps of: thermally oxidizing a silicon wafer(11) to form a pad oxide layer(12), forming a nitride layer on the upper side of the pad layer, patterning the nitride layer and the pad oxide layer using a pattern, thereafter dry etching the exposed silicon wafer to form a trench; wet etching the silicon wafer on which the trench is formed, such that an upper edge portion of the trench being rounded; thermally oxidizing the silicon wafer to grow a liner oxide layer(14) onto an inner wall of the trench; depositing an isolation layer(15) on the entire face of the silicon wafer to bury the trench; and removing the nitride layer after flattening the same layer.
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