| 摘要 |
PURPOSE: A method for forming a ferroelectric capacitor is provided to prevent the short between an upper electrode and a lower electrode by exposing the lower electrode through a ferroelectric film etching process. CONSTITUTION: The first platinum film for forming a lower electrode(21) of a capacitor is formed on an upper surface of a semiconductor substrate. A ferroelectric film(22) is formed on the first platinum film. The second platinum film for forming an upper electrode(23) of the capacitor is formed on the ferroelectric film(22). Then, the second platinum film and the ferroelectric film(22) are dry-etched in such a manner that the first platinum film is exposed while forming an upper electrode pattern and a ferroelectric film pattern. A ferroelectric film fence for covering the surface of the first platinum film, the ferroelectric film(22) and a side wall of the upper electrode(23) is formed. The lower electrode(21) is formed by etching the first platinum film.
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