STRUCTURE OF VERTICAL BMFET HAVING MULTI-GATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A structure of a vertical BMFET(Bipolar Mode Field Emission Transistor) having a multi-gate and a fabricating method thereof are provided to improve electric characteristics by improving a structure of a vertical BMFET. CONSTITUTION: A source region(4) and a gate region(3) are formed under a source electrode(S) and a gate electrode(G). A PN junction is formed between the gate region(3) and the source region(4). An epitaxial layer(2) is formed on a substrate(1). A drain electrode is formed under the substrate(1). The gate region(3) is located on the epitaxial layer(2). A MOS type gate(90) is contacted commonly with each side of the source region(4), the gate region(3), and the epitaxial layer(2) through the insulating layer(100). The source region(4) and the drain region(1) are formed by implanting the first conductive dopant ions. The gate region(3) is formed by implanting the second conductive dopant ions.