| 摘要 |
PURPOSE: A method for forming metalization of a semiconductor device is provided to improve a step coverage by forming double barrier films at upper and lower parts of a copper film. CONSTITUTION: A first insulating layer(2) and a second insulating layer(3) are sequentially formed on a substrate having a lower metalization(1). A contact hole is formed by sequentially etching the first and second insulating layer(2,3). A first barrier film(4) is formed on the resultant structure, wherein the etching selectivity of the first barrier film(4) is same to the second insulating layer(3). Then, a copper film(5) is partially filled into the contact hole. After forming a second barrier film(6) on the resultant structure, the second barrier film(6) is entirely filled into the contact hole by etching the second and first barrier film(6,4) using the second insulating layer(3) as an etch stopper.
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