发明名称 DATA OUTPUT DRIVING CIRCUIT FOR FLASH MEMORY DEVICE
摘要 PURPOSE: A data output driving circuit is provided to transfer data of a stable level to a data pin regardless of delay of state data when a flash memory device performs a read operation. CONSTITUTION: A flash memory device performs a state reading operation so that an operation performed inside a chip of the flash memory device may be known to outside. The flash memory device includes data pins(DQ) for informing outside of an operation state performed inside the chip during the state reading operation and a data output driving circuit(140) for outputting state data to the data pins. The data output driving circuit has a state data generator(141-145,TG1,TG2) and a driver(PM1,NM1). The state data generator outputs state data in synchronization with a rising edge of an internal output enable signal synchronous to an external output enable signal when a signal informing of the state reading operation becomes active. The driver receives the state data and outputs the state data whenever the external output enable signal toggles in a low level in response to the state reading enable signal.
申请公布号 KR20010003657(A) 申请公布日期 2001.01.15
申请号 KR19990024025 申请日期 1999.06.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, GI HWAN;PARK, JONG MIN
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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