METHOD FOR MANUFACTURING PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a plug of a semiconductor device is provided to guarantee process margin and to reduce manufacturing steps, by controlling a gap between gate lines to form a plug electrically connecting a bit line or a storage node with an active region of a transistor, and by forming a self-aligned plug only in the active region using a sidewall spacer of a gate. CONSTITUTION: A gate insulating layer(32) is formed on a semiconductor substrate(30) in which a field region and an active region are defined. A plurality of gate lines(33) having a cap insulating layer are formed. A low density impurity diffusion region(35) is formed on the active region. A sidewall spacer(361) exposing a part of the low density impurity diffusion region to a side of a gate line of the active region is formed with an insulating material, and the insulating material is filled between gate lines of the field region. A high density impurity diffusion region is formed in the active region by using the sidewall spacer. A conductive plug is formed which contacts the exposed impurity diffusion region and fills a space formed by the sidewall spacer of the active region.