| 摘要 |
PURPOSE: A method for forming gate electrode of semiconductor device is provided to form a gate electrode having a mid-gap work-function in PMOS and NMOS areas. CONSTITUTION: A gate oxide film(2), a n+ polysilicon film and an insulation film(4) are sequentially deposited on a silicon substrate(1). The insulation film is consisting of an oxide film, a nitride film, or a layered structure of an oxide and nitride film, and a semi-spherical silicon film(5) is formed on the insulation film. Using the semi-spherical silicon film as a mask, a portion of the insulation film positioned between the semi-spherical silicon film is etched. Using the insulation film as a mask, the n+ polysilicon film is etched to expose a desired portion of the gate oxide film, thereby forming a n+ gate electrode(3a). A micro channel is formed between the n+ gate electrode, in which a p+ gate electrode. After the etching process of the n+ polysilicon film, a gate oxide process is carried out on the exposed oxide film. A p+ polysilicon film(6) is deposited on a whole surface of the substrate.
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