| 摘要 |
PURPOSE: A method for fabricating a body contacted-SOI(BC-SOI) device is to prevent occurrence of a leakage current and a punch-through, thereby enhancing an electrical isolation capability between neighboring devices. CONSTITUTION: A method for fabricating a BC-SOI device comprises the steps of: providing a base substrate(21) and a semiconductor substrate; forming a thermal oxide layer(12), an impurity-doped first oxide layer(13) and second oxide layer(14) in the named order on the base substrate; and forming a third oxide layer(22) on the semiconductor substrate; junctioning the base substrate and the semiconductor substrate such that the second oxide layer is in contact with the third oxide layer; polishing a rear surface of the semiconductor substrate by a selected thickness to obtain a target thickness of semiconductor layer; forming a channel stop region(40) to be in contact with the thermal oxide layer within the field region of the semiconductor layer; forming a field oxide(41) having a thickness to be in contact with the channel stop region on a surface of the field region of the semiconductor layer; and forming a transistor(50) at an active region defined by the filed oxide.
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