METHOD FOR MANUFACTURING A STORAGE ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a storage electrode of a semiconductor device is provided to form a cylindrical metal storage electrode having a vertical profile, by using a spin-on-glass(SOG) layer as an etching barrier of a ruthenium layer. CONSTITUTION: An interlayer dielectric(13) having a storage electrode contact plug(15) is formed on a semiconductor substrate(11) having a predetermined lower structure. An etch blocking layer(17) and the first sacrificial insulating layer are sequentially formed on the entire surface. The etch blocking layer and the first sacrificial insulating layer are etched to form a contact hole by using a storage electrode mask as an etching mask. A diffusion blocking layer(23) and a storage electrode ruthenium layer(25) are sequentially formed on the structure while the contact hole is not filled. The second sacrificial insulating layer for planarization is formed on the entire surface. The storage electrode ruthenium layer and diffusion blocking layer are sequentially etched to separate the storage electrode ruthenium layer and an upper portion of the diffusion blocking layer. The second sacrificial insulating layer remaining on the storage electrode ruthenium layer is removed. The first sacrificial insulating layer and diffusion blocking layer are eliminated to form a cylindrical storage electrode.