| 摘要 |
PURPOSE: An apparatus for etching an oxide layer is provided to improve etching uniformity of an oxide layer, by generating surface wave plasma, by uniformly supplying hydrogen radicals on a wafer through a dispersing plate, and by disposing a heating lamp as a honey-comb type to have the wafer annealed evenly. CONSTITUTION: An apparatus for etching an oxide layer comprises a ring-type wave guide(32), a slot antenna(34), a round insulator(36), a heating block(40), a plasma generating unit, a susceptor(48), a reaction chamber and a dispersing plate(38). The slot antenna is mounted in a lower portion of the wave guide to transfer a micro wave to the round insulator. The round insulator is mounted in a lower portion of the slot antenna to generate a surface wave by the micro wave. The heating block includes heating lamps disposed on the wave guide and in the central portion of the wave guide. The plasma generating unit is composed of the first gas injector for a hydrogen gas injection established on a chamber wall located in a lower portion of the round insulator. The susceptor fixes a wafer. The reaction chamber is composed of the second gas injector for injecting etching gas into the wafer. The dispersing plate disperses hydrogen radicals between the plasma generating unit and the reaction chamber to be supplied to the wafer.
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