| 摘要 |
PURPOSE: A method for manufacturing a charge storage electrode of a semiconductor substrate is provided to increase a surface area of a charge storage electrode of a capacitor, by decreasing the height of a contact portion of a polysilicon plug. CONSTITUTION: A bit line(12) is formed in a selected region on a semiconductor substrate(11) having lower structures such as a word line and a junction region through a predetermined process. An insulating layer(13) and the first oxide layer are sequentially formed on the entire structure, and are selectively etched to form a contact hole exposing a predetermined region of the substrate. The second oxide layer, the third oxide layer and the anti-reflection layer are sequentially formed on the entire structure. A selected region of the anti-reflection layer, the third oxide layer, the second oxide layer and the first oxide layer are etched to expose the insulating layer and the polysilicon plug(15) protruded by the height of the first oxide layer. The protruded part of the polysilicon plug is removed. The second polysilicon layer is formed on the entire structure and the fourth oxide layer is filled. The fourth oxide layer and the second polysilicon layer are entirely etched and the fourth oxide layer is removed. The anti-reflection layer and the third, the second and the first oxide layers are eliminated.
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