| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric capacitor using a piezoelectric lead zirconate titanate (PZT) ferroelectric layer is provided to improve a characteristic of the capacitor, by forming a pattern in a constant direction in a lower layer of the PZT layer, thereby improving a crystallization of the PZT thin film. CONSTITUTION: A storage electrode is formed on a substrate. A pattern having a groove of the size of a piezoelectric lead zirconate titanate (PZT) grain is formed in a constant direction on the surface of the storage electrode. A PZT layer is formed on the storage electrode. A plate electrode is formed on the PZT layer. The PZT layer is a PbxZr1-yTiyO9 layer wherein x has a scope from 0.0 to 1.0 and y has a scope from 0.3 to 0.6.
|
