发明名称 DATA STROBE SIGNAL DRIVER OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A data strobe signal driver of a semiconductor memory device is provided which improves an operation speed and reduces an embodiment area, by using only a single pipe line latch. CONSTITUTION: The device includes: an output driving unit to output a data strobe signal in response to a pull-up signal(pu) and a pull-down signal(pd); a logic assemble circuit part(100) outputting a logical sum counter signal(pcnt_sum) by performing a logical assembly by receiving an even-numbered pipe counter signal of a number of bits and an odd-numbered pipe counter signal of a number of bits; a precharge unit(110) to precharge the pull-up signal and the pull-down signal in response to the first control signal and the second control signal; and a single pipe line latch part(120) to support a toggling operation of the data strobe signal by pull-down driving the pull-up signal or the pull-down signal selectively by inputting the logical sum counter signal and the third and the fourth control signal from the precharge unit. An output driving part(130) generates the data strobe signal in response to the pull-up signal and the pull-down signal. The logical assemble part comprises a NOR gate(101) receiving each bit signal of the even-numbered pipe counter signal, a NOR gate(102) receiving each bit signal of the odd-numbered pipe counter signal and a NAND gate(103) outputting the logical sum counter signal after performing NAND operation with both input terminals connected to each output terminal of the NOR gates.
申请公布号 KR20010004126(A) 申请公布日期 2001.01.15
申请号 KR19990024737 申请日期 1999.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, GYEONG WON;LEE, SEUNG HYEON
分类号 G11C11/401;(IPC1-7):G11C11/401 主分类号 G11C11/401
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