| 摘要 |
PURPOSE: A method for manufacturing a reflection mask for an EUV(Extreme Ultra-Violet) is provided to improve the reliability of a semiconductor device by forming a desired resist pattern on a wafer. CONSTITUTION: A reflection layer(52) consisting of a pair of a silicon film(52a) and a molybdenum film(52b) is formed on a silicon substrate(51). A capping layer(53) is formed on the reflection layer(52). Then, a buffer layer(54) and a metal layer(55) are sequentially formed on the capping layer(53). After that, a resist pattern for defining an absorbing layer forming area and a hard mask film are formed on the metal layer(55). The hard mask film is patterned by using the resist pattern as a mask. Then, the metal layer(55) and the buffer layer(54) are etched by suing a patterned oxide film as a mask thereby forming a vertical absorbing layer(55a).
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