| 摘要 |
PURPOSE: A method for forming an anti-reflection film of a semiconductor device is provided to form a pattern of a high integration semiconductor device by closing the beam reflected from a thin film. CONSTITUTION: The first photoresist having a low viscosity is coated at an upper portion of a thin film(2). Then, the first photoresist is exposed so as to cure the first photoresist. An anti-reflection film is formed on the first photoresist. Then, the photoresist which is used as a mask in a photo etching process is coated on the anti-reflection film. In order to form the anti-reflection film, the cured first photoresist is reacted with a silicon ion. Then, the first photoresist is reacted with a mixing gas plasma thereby forming an SiON thin film(2) on the upper portion of the first photoresist thin film.
|
