| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve a characteristic of a leakage current in a barrier metal layer. CONSTITUTION: A method for manufacturing a capacitor of a semiconductor device comprises the following steps. An insulating interlayer(12) and an insulating layer(13) are formed on a semiconductor substrate(11). A contact hole is formed to expose the semiconductor substrate(11). A doped polysilicon plug(14) with a plug recess is formed within the contact hole. An IrSix layer(16a) is formed on a surface of the doped polysilicon plug(14). A barrier metal layer(17) is formed within the plug recess. A lower electrode(19) is formed to connect it with the barrier metal layer(17). A dielectric layer is formed on the lower electrode(19). An upper electrode is formed on the dielectric layer.
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