| 摘要 |
PURPOSE: A capacitor charge storage electrode formation method is provided to be capable of increasing the static capacitance and prohibiting generation of bridge, by forming polysilicon as a double layer and using MPS(metastable polysilicon) growth, after formation of an internal cylinder. CONSTITUTION: An etch prevention film(7) on a semiconductor substrate is formed. An oxide film is then formed on the etch prevention film. Next, the oxide film is selectively etched and accordingly the exposed etch prevention film is etched, thus forming a given capacitor contact region. A dual polysilicon layer is formed by continuously depositing polysilicon having a different doping concentration on the entire surface of the oxide film including the capacitor contact region. Then, the dual polysilicon layer is divided depending on a capacitor charge storage electrode. The oxide film is removed, Next, MPS is grown on the entire surface of the dual polysilicon layer, thus forming a cylinder-shape charge storage electrode made of polysilicon and MPS.
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