METHOD FOR FORMING INTERLAYER INSULATING FILM IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: An interlayer insulating film formation method in semiconductor devices is provided to be capable of uniformly maintaining the concentration of fluorine and also minimizing the dielectric constant. CONSTITUTION: SiH3F gas or SiH2F2 gas as a source gas of fluorine is used when an FSG (fluorinated silicate glass) film is deposited as an interlayer insulating film between metal lines in the manufacture process of semiconductor devices. In case of forming the interlayer insulating film between metal lines using SiH3F gas or SiH2F2 gas as a source gas, the present invention employs the fact that the bond strength of Si-H is smaller than that of Si-F.