METHOD FOR FORMING BPSG FILM IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A BPSG film formation method in semiconductor device is provided to be capable of preventing adhesion of boron and phosphorous ions from a high-concentration BPSG film to the thermal processing equipment. CONSTITUTION: A semiconductor substrate(11) is first provided in which circuit elements are formed. A BPSG film(12) is then formed on the semiconductor substrate. Next, an oxide film(13) is formed on the BPSG film. Then, annealing process is performed by loading the semiconductor substrate on which the oxide film is formed within the thermal process equipment, so that the BPSG film can be reflowed. The BPSG is made dense and the surface on which the oxide film is formed is planarized.