| 摘要 |
PURPOSE: A copper metal wiring formation method in semiconductor devices is provided to be capable of preventing contamination of a low dielectric film and of improving reliability of devices. CONSTITUTION: A lower copper wiring layer(12) is first formed on a semiconductor substrate(11). The first insulating film(13), a low dielectric film(14) and the second insulting films(15) are then sequentially formed on the lower copper wiring layer. Next, after forming a photoresist film(16) on the second insulating film, the photoresist film is patterned by photoetching process using a mask for formation of a via hole. Then, the exposed portion of the second insulating film is etched using the patterned photoresist mask as an etch barrier layer. Thereafter, the low dielectric film is etched using the patterned photoresist film and the second insulating film as an etch barrier layer so that the first insulating film can be exposed. Then, the third insulating film(17) is formed on the entire structure including the via hole. By performing a blanket etch process using anisotropic etch process, the third insulating film remains only at the internal sidewall of the via hole. An upper copper wiring layer is then formed on the entire structure.
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