METHOD FOR MANUFACTURING HIGH INTEGRATED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a high integrated semiconductor device is provided to improve reliability and productivity, by guaranteeing an insulating space margin with a conductive layer through which a contact passes without increasing an aspect ratio of the contact. CONSTITUTION: The first insulating layer(20), the second conductive layer(22) and the third insulating layer(23) are sequentially stacked on the first conductive layer. The second insulating layer is selectively etched and a predetermined thickness of the exposed second conductive layer is etched. The third insulating layer is formed on a step sidewall of the resultant structure. The second conductive layer is etched to expose the first insulating layer by using the third insulating layer and the second insulating layer as an etching mask. The fourth insulating layer as an etching stop layer and the fifth insulating layer for interlayer insulation are formed on the resultant structure. The fifth insulating layer, the fourth insulating layer and the first insulating layer are etched to form a contact hole by using a contact mask.