发明名称 SDRAM
摘要 PURPOSE: A SDRAM(Synchronous Dynamic Random Access Memory) is provided which enables a fast driving by reducing a line load, by making word line enable signal lines drive cell arrays from a center. CONSTITUTION: The device makes word line enable signal lines drive cell arrays from a center by arranging two word line enable signal lines additionally on an upper part of a cell region of the SDRAM. The SDRAM drives a word line of two cell arrays by two word line enable signal lines located in the center of two cell arrays and two word line enable signal lines located in an end part of two cell arrays. Two word line enable signals are additionally arranged to the outside of an uppermost cell array(30), and the uppermost cell array and a lowermost cell array(40) are driven by the word line enable signal line arranged on the outside of the uppermost cell array and the lowermost cell array. And, the SDRAM drives two cell arrays adjacent each other in the center by other word line enable signal lines located in the center of the cell array. Therefore, the SDRAM improves the driving speed of the word line by reducing a line load.
申请公布号 KR20010004413(A) 申请公布日期 2001.01.15
申请号 KR19990025045 申请日期 1999.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUN, CHUN U
分类号 G11C11/401;(IPC1-7):G11C11/401 主分类号 G11C11/401
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