| 摘要 |
PURPOSE: A nonaqueous stripper composition for chemically amplified negative resists showing excellent removing capabilities, which has anticorrosive effects on varieties of metallic substrate plates such as Al, W, TiN, WSi, SiON, SiNx, HTO, etc., capable of being reutilized as a nonaqueous stripper even after usage is completed and stably performing fine processing is provided, which is suitable in electronic material fields in which high precision processing is required in the chemically amplified negative resist removing process. CONSTITUTION: The stripper composition for chemically amplified negative resists comprises a) 20 to 35% by weight of straight chained alkylbenzenesulfonic acid of formula 1; b) 10 to 34% by weight of a light aromatic naphtha solvent; c) 30 to 45% by weight of organic compounds containing chlorine; d) 15 to 25t% by weight of hydroxybenzene; and e) 0.5 to 5% by weight of polyoxyethylene octylphenylether derivatives. In formula, R is C10-14 alkyl. The straight chained alkylbenzenesulfonic acid of formula 1 is decylbenzenesulfonic acid or dodecylbenzenesulfonic acid. The organic compounds containing chlorine are one or more selected from the group consisting of 1,2,3-trichlorobenzene, 1,2,4-trichlorobenzene and 1,3,5-trichlorobenzene.
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