| 摘要 |
PURPOSE: A method of manufacturing a thin film transistor array substrate is to form uniformly a thickness of a photosensitive film above 1.8 micrometers, thereby eliminating a Descum process. CONSTITUTION: A method of manufacturing a thin film transistor array substrate comprises the steps of: forming a protective film(23); doping a photosensitive film(24) on the protective film; forming a pattern of the photosensitive film; forming a contact hole; and forming a pixel electrode. The doping process of the photosensitive film is achieved by a series of 4 steps. The first step is to dope the photosensitive film with a predetermined thickness, during rotating the substrate with 300rpm for 3 seconds. The second step is to dope the photosensitive film on the resultant created by the first step, during rotating the substrate up to 900rpm for 11.3 seconds. The third step is to dope the photosensitive film on the resultant created by the second step, during rotating the substrate up to 200rpm for 3 seconds. The fourth step is to dope the photosensitive film on the resultant created by the third step, during rotating the substrate up to 900rpm for 2 seconds.
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