| 摘要 |
PURPOSE: A circuit for applying a DC stress and a semiconductor circuit using thereof are provided to measure the correlation of a gate delay directly according to the degradation of a device due to a hot carrier in a circuit level. CONSTITUTION: A circuit(100) for applying a DC stress comprises a DC stress applying terminal(20) where a DC stress can be applied in each stage of a device in the circuit and a switch(10) to select an operation mode of the stress applying terminal. The circuit can measure the degradation of the device directly, by applying a hot carrier stress to the device directly. The DC stress applying terminal is connected to each stage of the device in order to extract a gate delay of a digital circuit, and thus the variation of the gate delay generated by the degradation of the device can be known. The switch controls that a DC stress signal from the DC stress applying terminal is applied to a semiconductor circuit(30) by a control signal.
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