| 摘要 |
PURPOSE: A metal wiring formation method is provided to be capable of simplifying the process by omitting a barrier metal process and of minimizing the contact leakage current while lowering the contact resistance. CONSTITUTION: A metal wiring formation method includes forming a metal contact(3a) and a metal trench(3b) by dual damascene pattern(3). The metal contact is then buried with C-54 TiSi2 using TiCl4 and SiH2. After burying the trench by depositing Al, chemical mechanical polish process is performed.
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