发明名称 ETCHANT OF 6A GROUP FOR PATTERNING OF GATE OR SOURCE/DRAIN ELECTRODE
摘要 PURPOSE: An etchant of 6a group is to improve an etching efficiency for a bottom metallic layer in a process for etching a double layer structured gate. CONSTITUTION: An etchant of 6a group comprises 10 to 13% by weight of Ce(NH4)x(NO3)y, wherein x exceeds zero, and y exceeds zero; 4 to 6% by weight of HClO4; and 1 to 3% by weight of CH3COOH, alternatively Ce(NH4)x(NO3)y, wherein x exceeds zero and y exceeds zero, being contained by 11 to 13% by weight, HClO4 being contained by 4 to 5% by weight, CH3COOH being contained by 1 to 2% by weight, and x is 2 and y is 6. Using the etchant, a Cr layer is selectively etched and the remaining chemical components after etching does not nearly exist, so that the Cr layer being directly etched immediately after an Al alloy layer is etched and therefrom a photoresist is stripped off, thus to eliminate a hard baking process and an ashing process.
申请公布号 KR20010003399(A) 申请公布日期 2001.01.15
申请号 KR19990023692 申请日期 1999.06.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN SU;YOO, JEONG SIK
分类号 H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/786
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