发明名称 OVERLAPPING MARK IN SEMICONDUCTOR DEVICES AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: An overlapping mark in semiconductor devices and method for forming the same are provided to be capable of easily measuring the overlapping degree because the center of the circle does not change when a metal layer for metal wiring is expanded. CONSTITUTION: An overlapping mark includes a mother stick(13') of an outer box and a circular shape and a son stick(17) of an inbox at the center of the outer box. The mother stick is formed by etching metal wiring material layers using the first photosensitive film pattern(15) as a mask and then removing the first photosensitive film pattern. Also, the son stick is formed on the oxide film filling between the metal wiring material layers.
申请公布号 KR20010003260(A) 申请公布日期 2001.01.15
申请号 KR19990023482 申请日期 1999.06.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SEO MIN;SIM, GWI HWANG
分类号 H01L23/544;(IPC1-7):H01L23/544 主分类号 H01L23/544
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