| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is to improve a process yield and a reliability of a device operation by preventing an increase of a resistance or a disconnection of a metal interconnection. CONSTITUTION: A method of fabricating a semiconductor device comprises the steps of: forming the first interlayer dielectric(43) on a semiconductor substrate(41) with a predetermined lower structure substance formed thereon; forming the first metal interconnection(45) on the first interlayer dielectric; forming a deposition structure with the second interlayer dielectric(47), an etch stop layer(49), and the third interlayer dielectric(51) deposited on the whole surface of the structure; etching the deposition structure by using a via contact mask as an etching mask and then forming a via contact hole; forming the first photoresist layer for filling in the via contact hole on the whole surface; etching the first photoresist film by using a CMP(chemical mechanical polishing) or a whole surface etching process and then forming a plug type first photoresist pattern filled in the via contact hole; forming the second photoresist pattern for exposing a part planned as the via contact hole and the second metal interconnection the whole surface; forming a trench(57) to be formed with the second metal interconnection; and removing the second photoresist pattern.
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